Epitaxial Liftoff Technology onto Processed Silicon Foundry Wafers

摘要

Technical Objectives: Research the application of liftoff transfer of epitaxialmaterial to foreign substrates including: surface chemistry, electrical, mechanical, thermal and optical properties of Van der Waals bonded materials; III-V devices bonded to silicon circuitry and to other substrates with enhanced optical, electrical or thermal properties; integrated optical devices incorporating lifted-off material and/or devices with LiNbO3, glass or other substrates. Approach: This effort addresses the need for new technologies which can fully utilize the performance advantages of III-V (GaAs, InGaAs, InGaAsP, and InP) materials for electronic and opto-electronic applications. Specifically, the program is directed at demonstrating the potential of epitaxial liftoff as a technology to enable the realization of 'monolithic' optoelectronic devices with the characteristics of epitaxial material. That is, by transfer of epitaxial material to foreign substrates in a form that permits material processing and device fabrication to proceed as though the epitaxial material were grown directly on the substrate.