Non-Destructive X-Ray, Optical and Electrical Materials CharacterizationTechniques for Silicon-on-Insulator (SOI) Technology

摘要

The properties of the buried Si-SiO2 interface, the concentration of structuraldefects, and the level of contamination have been monitored nondestructively via their effect on the surface and bulk components of recombination lifetime by a laser/microwave photoconductance technique. It has been found for single and multiple implant/anneal SIMOX material that the bulk recombination lifetime decreases if the annealing alone (no implantation), or both implantation and annealing processes are applied. However, a bulk lifetime recovery for multiple implant/anneal process is observed after the second and third processing steps. In addition, the superficial layer and Si-SiO2 interface still contain a very high density of electrical defects even after the structural damage removing/oxide forming high temperature treatment. This defect density results in a surface recombination velocity on the order of 1000 cm/s, two or three orders of magnitude more than a surface subjected to annealing alone (without implantation), and only one order less than non-annealed, implanted material. (MM).