GaAs/AIGaAs Multiquantum Well Resonant Photorefractive Devices Fabricated Using Epitaxial Lift-Off.

摘要

This letter deals with resonant photorefractive devices fabricated from multi-quantum wells of GaAs/Al0.3Ga.07As and operated in a quantum- confined Stark effect geometry. Details of the processing are presented. Epitaxial lift-off was used to remove the active device from the substrate. Low- temperature Al0.3Ga.07 was used as an insulator to form metal-insulator- semiconductor structures on both sides of the multi-quantum wells. Proton implant damage was used to improve the fringe visibility. Photorefractive wave mixing with a diffraction efficiency of approx. 0.03% was demonstrated. The incorporation of a nitride layer between the top electrode and the low- temperature AlGaAs increased the efficiency to 0.5%. The improvement is attributed to a reduction in the conduction of carriers across the low- temperature layer into the electrode.