Development of Si Light Emitting Technology Based on Si Quantum Wires

摘要

The objectives of this program are four folds. (1) Process development: developnew techniques to fabricate luminescent PS, control the luminescence spectra, and process PS with minimal damage to the luminescent properties. To that end, we have developed a novel approach to produce luminescent PS without an external electrical bias by stain etching Si in HF-HNO3-based solution. In addition, we have utilized dry oxidation to efficiently control the PL spectrum. Excellent PL selectivity with micrometer resolution was also achieved by protecting Si with a metal or dielectric mask during anodization. (2) Material study: characterize the microstructure and physical chemistry of luminescent PS as functions of preparation conditions by microscopic and spectroscopic techniques. (3) PL mechanism study: investigate the origin of visible PL in PS by studying quantum-size effects, H-based models, molecular electronics, as well as the effects of surface passivation. (4) Electroluminescence (EL) devices: fabricate and characterize the PS-based EL devices. Surface-emitting and edge-emitting light-emitting diodes (LEDs) have been fabricated and critically characterized. jg p.3.