Heteroepitaxial Materials and Devices of III-V Arsenides and Antimonides byMolecular Beam Epitaxy

摘要

Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells have been demonstrated. Enhancement of normal incidence intervalence subband absorption in GaSb quantum wells coupled to a neighboring InAs has been observed. The orientation dependence of infrared absorption in AlAs/A1GaAs x-valley multiple quantum wells grown on GaAs and Si has been studied. InSb films with excellent x-ray rocking curve linewidths have been grown on GaAs and Si by molecular beam epitaxy for infrared detector applications. AlSbAs/InAs heterostructure field-effect transistors with high breakdown voltage has been achieved. jg.