Quantum Transistor Circuits. Physics of Semiconductor Light Sources.

摘要

The earlier research focused on destabilization (appearance of new frequencies, new polarizations, and/or new spatial patterns) and stabilization (locking of frequency, polarization, and pattern) by injecting a narrowband cw laser beam into a VGSEL. A very weak injected beam can have great effects because of cavity (>300) and gain (> 10) enhancements. Not only were clean definitive data taken, but excellent agreement was also obtained between the data and plasma theory computations. This new level of understanding and ability to model could be useful in locking arrays of VCSELs and stabilizing the frequency, polarization, and spatial pattern emitted by a VCSEL. The more recent research has focused on the transfer of energy from a semiconductor to a light beam. Work still in progress includes: observation of an order of magnitude shortening of the carrier lifetime for room temperature carriers within a high finesse microcavity compared with carriers at the same below transparency density a few millimeters away in the same 100-nm bulk GaAs layer, observation of very pronounced vacuum field Rabi oscillations between a very narrow quantum well exciton and a narrow microcavity mode, and 1.54-micron photoluminescence from Er(+3) ions excited by energy transfer from optically excited InGaAs/GaAs quantum wells.