Epitaxial Growth of Diamond Films Using Low Energy C- Ion Beam SurfaceModification

摘要

Proposes Performance Plan. Construct the C-ion source and MW plasma CVD system.Investigate the epitaxial growth processing technology by controlling the surface modification process and produce PE CVD. Characterize the optical and structural properties of the typical samples. Refine deposition process design. Final report. According to the above proposed performance plan, we were constructing the deposition system and C-ion source in a previous month. The proposed work will be performed in two independent systems: (1) obtain C-ion beam parameters for the optimum surface configuration for epitaxial diamond nucleation in LEED installed UHV chamber, (2) epitaxial growth studies in ion beam CVD system where