Thermo- and galvanomagnetic technique for semiconductors testing at high pressure up to 30 GPa

摘要

The thermoelectric power (S), magnetoresistance (MR) and thermomagnetic (TM) effects were measured at high pressure (P) in the vicinity of semiconductor-metal phase transitions for Te, Se and S micro-samples. From longitudinal and transverse Nernst-Ettingshausen (N-E) effects for Te and Se, the scattering parameter (r) of holes was estimated and under the closing of semiconductor gap (E-g) the decreasing of their effective mass (m) was found. S of Sulphur also decreased with pressure up to 40 GPa and the negative MR effect observed indicates low mobility (mu) of holes. The technique developed seems to be suitable for use in micro-device technology. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 12]