Thermo- and galvanomagnetic measurements of semiconductors at ultrahigh pressure

摘要

The thermoelectric power, magnetoresistance, and thermomagnetic effects were measured for Te and Se micro-samples in the vicinity of semiconductor-metal phase transitions at high pressure. From longitudinal and transverse Nernst-Ettingshausen effects the scattering parameter r of holes was estimated and a decrease of the effective mass of holes was found during the closing of semiconductor gap. After the high pressure treatment an inversion of the sign of parameter r corresponding to a change of scattering mechanism was observed for the Te sample due to an increase of the density of lattice defects. [References: 21]