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Optical properties of InAs/In0.15Ga0.85As quantum dots-in-a-well studied by piezomodulated reflectance spectroscopy

机译:压电调制反射光谱法研究InAs / In0.15Ga0.85As量子点的光学性质

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Piezomodulated reflectance (PzR) spectroscopy has been used to study the InAs/Ino(0.15)Ga(0.85)As quantum dots-in-a-well (DWELL) samples in the temperature range of 70-300K. The optical transitions from ground state to excited states in InAs DWELL were observed. The heavy- and light-hole transitions from the hybrid quantum well (HQW) were identified by combining the one-dimensional effective mass approximation (EMA) with the selected modulation effect in PzR spectrum. A remarkable red shift of the ground state has been observed in the InAs DWELL with optimized growth of In0.15Ga0.85As quantum well layers. Cooling both DWELL samples produces an abnormal broadening of the QD transitions in PzR spectra. (C) 2007 Elsevier B.V. All rights reserved.
机译:压电调制反射率(PzR)光谱已用于研究在70-300K温度范围内的InAs / Ino(0.15)Ga(0.85)As量子阱孔(DWELL)样品。在InAs DWELL中观察到从基态到激发态的光学跃迁。通过将一维有效质量逼近(EMA)与PzR光谱中选定的调制效应相结合,确定了来自混合量子阱(HQW)的重孔和轻孔跃迁。在InAs DWELL中观察到基态发生了明显的红移,并优化了In0.15Ga0.85As量子阱层的生长。冷却两个DWELL样品都会在PzR光谱中产生QD跃迁的异常展宽。 (C)2007 Elsevier B.V.保留所有权利。

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