Raman spectrum of array-ordered crystalline silicon-nanowires

摘要

Array-ordered single-crystal silicon nanowires were fabricated by the nanochannel-aluminal and CVD method. The average length and diameter of the nanowires is about 10 mum and 60 nm, respectively. A study of the Raman spectrum of the nanowires shows that the Raman shift to low frequency is due to the quantum confinement effect, which is discussed by using the phonon confinement model. Also we determine the peaks of the Raman spectrum to be corresponding to that of crystal silicon (c-Si). (C) 2004 Published by Elsevier B.V.