The hydrostatic pressure and electric field effects on the normalized binding energy of hydrogenic impurity in a GaAs/AlAs spherical quantum dot

摘要

A theoretical study of combined effects of the hydrostatic pressure and the electric field on the subband ground state energy and on the normalized ground state binding energy of a hydrogenic donor impurity on center located in a GaAs/AlAs spherical quantum dot with fixed dot radius is presented. The study is performed in the framework of the effective mass and parabolic band approximations and using a variational procedure. As a key result, it may be possible to gather high resolution maps of electric field on the studied structure with described technique.