High-field electron transport in GaAs/AlxGa1-xAs p-i-n-i-p-structures investigated by ultrafast absorption changes

摘要

High-field electron transport is studied in a GaAs AlxGa1-xAs p-i-n-i-p-structure with a specially designed composition profile. Electron transfer in real space and energy relaxation is investigated via time-resolved measurements using various probe energies. We observe a transfer time of similar to 10 ps for the transport of electrons over 600 nm. This time is found to be nearly independent of he reverse bias voltage. The experimental findings are in good agreement with Monte Carlo simulations. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 3]