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Nonlinear optical rectification and optical absorption in GaAsGa _(1-x)Al_xAs double quantum wells under applied electric and magnetic fields

机译:电场和磁场作用下GaAsGa _(1-x)Al_xAs双量子阱中的非线性光学整流和光吸收

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摘要

In this work are studied the electron-related nonlinear optical absorption and nonlinear optical rectification in GaAsGa_(1-x)Al_xAs asymmetric double quantum wells under applied electric and magnetic field. The density matrix formalism and the effective mass and parabolic band approximations have been considered. The main findings show that in asymmetrical heterostructures under an appropriate strength of the electric field it is possible that the optical rectification is zero and in such circumstances the optical absorption has a relative maximum; similar behavior is observed in these optical properties as a function of the length of one of the two quantum wells and without applied electric field. Also, the results suggest that in asymmetric double quantum wells the optical absorption is a nonmonotonic increasing (decreasing) function of the applied magnetic field (width of the central barrier) and that particularly when the optical absorption has an inflection point the optical absorption has an absolute maximum. Finally we found that the resonant peaks in the nonlinear optical rectification and nonlinear optical absorption can be red-shifted to low photon energies or blue-shifted to large photon energies depending on the energy difference of the two lowest confined states in the heterostructure, and this condition can be controlled by changes in the external proofs such us applied electric and magnetic fields or by changes in the structural dimensions of the coupled quantum well system.
机译:在这项工作中,研究了在电场和磁场作用下,GaAsGa_(1-x)Al_xAs非对称双量子阱中电子相关的非线性光学吸收和非线性光学整流。已经考虑了密度矩阵形式主义以及有效质量和抛物线带近似。主要发现表明,在适当的电场强度下的非对称异质结构中,光学整流可能为零,在这种情况下,光学吸收具有相对最大值;在这些光学性质中观察到类似的行为,这是两个量子阱之一的长度的函数,并且没有施加电场。同样,结果表明,在非对称双量子阱中,光吸收是所施加磁场(中心势垒的宽度)的非单调增加(减小)函数,尤其是当光吸收具有拐点时,光吸收具有绝对最大值。最后,我们发现,根据异质结构中两个最低约束态的能量差,非线性光学整流和非线性光学吸收中的共振峰可以红移为低光子能量,或蓝移为大光子能量。可以通过外部证明(例如施加的电场和磁场)的变化或耦合量子阱系统的结构尺寸的变化来控制条件。

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