Transport measurements of valence band holes in p-type SiGe quantum well structure containing Ge quantum dots

摘要

Magneto-tunnelling for holes was studied in SiGe/Si SiGe heterostructures with Ge quantum dots of the 'hut cluster' type in the middle of the Si-layer. At temperatures below 10 K two different transport regimes can be distinguished in the current-voltage characteristic. In high magnetic fields a dramatic instability develops in the non-linear current-voltage characteristics. The influence of different layer structures is discussed. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 13]