Large band gap bilayered hole-transport-layer of quantum dot photovoltaic to reduce open-circuit voltage issue

摘要

The present invention relates to a quantum dot solar cell having a large band gap bilayered hole transport layer (HTL) for improving an open type circuit voltage, which may improve performance of a solar cell device by utilizing a material with a large energy barrier in an HTL and minimizing a leakage current. The quantum dot solar cell comprises: a transparent electrode (a); and an N-type semiconductor (b). In an HTL, a band gap is formed between a valence band level and a conduction band level. The valence band level of the HTL has potential energy higher than potential energy of a valence band level of a quantum dot layer, and the conduction band level of the HTL has potential energy higher than potential energy of a conduction band level of the quantum dot layer.