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NORMAL RESISTIVITY AND SUPERCONDUCTIVE PROPERTIES ON YBA2(CU1-XNIX)(3)O-7-DELTA FILMS

机译:YBA2(CU1-XNIX)(3)O-7-Delta膜的正电阻率和超导性能

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摘要

We report the successful fabrication and characterization of YBa2(Cu,Ni)(3)O-7-delta epitaxial thin films. On doping with Ni, T-c decreases and resistivity increases for YBa2(Cu1-xNix)(3)O-7-delta films. The reduction rate of T-c, dT(c)/dx, changes at x similar to 3% from similar to -5.4K/% for low Ni concentrations to -2.1K/% for higher concentrations. The rate of increase of resistivity, d rho(n)/dx, also changes at the same doping content. This dependence of T-c and resistivity suggests a site preference change of the Ni atoms, from the CuO2 plane to the CuO chain. [References: 21]
机译:我们报告了YBa2(Cu,Ni)(3)O-7-δ外延薄膜的成功制造和表征。在掺杂Ni时,YBa2(Cu1-xNix)(3)O-7-δ薄膜的T-c降低且电阻率增加。 T-c的降低率dT(c)/ dx,在x处降低了3%,从低Ni浓度时的-5.4K /%变为高浓度时的-2.1K /%。电阻率的增加速率d rho(n)/ dx在相同的掺杂含量下也会发生变化。 T-c和电阻率的这种依赖性表明,从CuO2平面到CuO链,Ni原子的位置偏好发生了变化。 [参考:21]

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