Microwave induced co-tunnelling in single electron tunneling transistors

摘要

The influence of microwaves on the co-tunneling in single electron tunneling transistors has been investigated as function of frequency and power in the temperature range from 150 to 500 mK. All 20 low frequency connections and the RF line were filtered, and the whole cryostat was suspended on rubber bellows. Cross-talk was minimized by using individual coaxial lines between the sample and the room temperature electronics: The co-tunneling experiments were performed at zero DC bias current by measuring the voltage response to a very small amplitude 2 Hz current modulation with the gate voltage fixed at maximum Coulomb blockade. With the microwave signal applied to one side of the transistor, we find that the conductance increases linearly with T-2 and microwave power. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 6]