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Variable range hopping and spin-dependent hopping resistance in magnetic iron oxide films

机译:磁性氧化铁膜的可变范围跳变和自旋相关的跳变电阻

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Insulating iron oxide films exhibit variable-range-hopping conductance. From 100 K to near room temperature the resistance can be expressed as R = R-0 exp(T-0/T)(P), where p takes values of 0.6-0.7. p is unchanged in an applied field up to 9 T. The magnetoresistance of the films is negative, which increases in magnitude with decreasing temperature. The negative magnetoresistance may originate from the spin-dependent variable-range-hopping in which hopping rate depends on the relative orientation of the spins of the involved sites. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 13]
机译:绝缘氧化铁膜表现出可变的跳频电导。从100 K到接近室温,电阻可以表示为R = R-0 exp(T-0 / T)(P),其中p取0.6-0.7。在高达9 T的外加电场中,p不变。薄膜的磁阻为负,随着温度降低,其磁阻值会增加。负磁阻可能源自自旋相关的可变范围跳跃,其中跳跃率取决于所涉及位点的自旋的相对方向。 (C)2000 Elsevier Science B.V.保留所有权利。 [参考:13]

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