Direct determination of epitaxial film and interface structure: Gd2O3 on GaAs (100)

摘要

We present a new method of sub-Angstrom resolution imaging of the 3D structure of epitaxial films and their interface with the substrate. The method utilizes the diffraction intensities along the substrate-defined Bragg rods and some crude knowledge of the system structure to determine the complex scattering factors (CSFs) along the Bragg rods. The system electron density and the structure is obtained by Fourier transforming the CSFs into real space. We have applied this method to study the structure of a Gd2O3 film and its interface with the GaAs substrate. The results show that the Gd2O3 abandons the bulk stacking order and adopts that of GaAs. Moreover, the atoms in the first few layers move to in-plane positions that overlap those of the underlying Ga and As. This behavior may be at the heart of its ability to passivate GaAs. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 11]