Exciton trapping in interface defects/quantum dots in narrow quantum wells: magnetic-field effects

摘要

The effects of applied magnetic fields on excitons trapped in quantum dots/interface defects in narrow GaAs/ Ga1-xAlxAs quantum wells are studied within the effective-mass approximation. The magnetic fields are applied in the growth direction of the quantum wells, and exciton trapping is modeled through a quantum dot formed by monolayer fluctuations in the z-direction, together with lateral confinement via a truncated or infinite parabolic potential in the exciton in-plane coordinate. Theoretical results are found in overall agreement with available experimental measurements. (C) 2003 Elsevier B.V. All rights reserved. [References: 11]