Vacancy-hydrogen complexes in group-IV semiconductors

摘要

Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm~(-1) in Ge : H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge : H and Si : H. In contrast, no LVMs are observed in 6H-SiC : H, indicating that H behaves differently in this material.