Carrier dynamics in double barrier diodes incorporating quantum dots

摘要

We investigate carrier dynamics in a n-i-n GaAs/(AlGa)As double barrier resonant tunneling diode in which a layer of InAs self-assembled quantum dots is embedded in the centre of the GaAs well. A combination of photoluminescence and electrical measurements on this diode shows that the dot photoluminescence properties depend strongly on bias. In particular, they are affected by tunnelling of majority (electrons) and minority (photocreated holes) carriers through the well. The measurements demonstrate that this type of device can be used to induce controlled, resonant changes in the dot photoluminescence as well as to probe the tunnelling process.