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Single crystal growth and physical properties in UPd_2(Al_(1-x)Ga_x)_3

机译:UPd_2(Al_(1-x)Ga_x)_3中的单晶生长和物理性质

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摘要

Measurements of specific heat, electrical resistivity and magnetization for single crystalline samples of UPd_2(Al_(1-x)Ga_x)_3 for Ga concentrations of x <= 0.2 are presented for the first time. As the gallium atom is substituted for the aluminum, the superconducting transition temperature T_c indicates a rapid decrease and the antiferromagnetic transition temperature T_N reduces gradually. We found an entropy released at T_N to decrease with the increase of x, suggesting that the increase of spin fluctuations is responsible for the reduction of T_N. We also discuss the x-dependence of the magnetic susceptibility.
机译:首次提出了当Ga浓度≤0.2时UPd_2(Al_(1-x)Ga_x)_3单晶样品的比热,电阻率和磁化强度的测量值。当用镓原子代替铝时,超导转变温度T_c迅速下降,反铁磁转变温度T_N逐渐下降。我们发现在T_N处释放的熵随x的增加而减小,这表明自旋涨落的增加是T_N减少的原因。我们还讨论了磁化率的x依赖性。

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