High field magnetoluminescence spectroscopy of self-assembled (InGa)As quantum dots on high index planes

摘要

Structures are investigated with InAs and (InGa)As self-organised quantum dots embedded in GaAs matrices grown on (100) and (311)A substrates. The photoluminescence line widths for quantum dots on the high index planes are significantly narrower than have previously been reported. From the diamagnetic shift of the photoluminescence in magnetic fields up to 42 T, the spatial extent of the carrier wave function is estimated and compared with the geometrical size of the dots. This comparison allows a qualitative explanation of the narrow photoluminescence of the quantum dots grown on (311) planes. (C) 1998 Elsevier Science B.V. All rights reserved. [References: 11]