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首页> 外文期刊>Physica, B. Condensed Matter >Estimation of the density of localized states of a-Se100-xBix films from electrical properties
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Estimation of the density of localized states of a-Se100-xBix films from electrical properties

机译:从电学性质估算a-Se100-xBix薄膜的局部态密度

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The density of states (DOS) near the Fermi level is calculated using DC conductivity (Mott parameters) and Space Charge Limited Conduction (SCLC) measurement data. DC conductivity measurements on thin films of a-Se100-xBix (x = 0, 0.5, 2.5 and 5) are reported in the temperature range 219-375 K. At high temperature 249-375 K, the conduction occurs in the extended states while at lower temperature (219-249 K) the conduction is due to variable range hopping. I-V measurements have also been done on a-Se100-xBix at different electric fields. SCLC is observed in a-Se100-xBix. (C) 2002 Published by Elsevier Science B.V. [References: 42]
机译:费米能级附近的状态密度(DOS)使用直流电导率(莫特参数)和空间电荷受限电导(SCLC)测量数据来计算。报告了在219-375 K的温度范围内测量a-Se100-xBix薄膜(x = 0、0.5、2.5和5)的直流电导率。在249-375 K的高温下,传导发生在扩展状态,而在较低温度(219-249 K)下,传导是由于变程跳变引起的。 I-V测量也已在a-Se100-xBix上的不同电场下完成。在a-Se100-xBix中观察到了SCLC。 (C)2002由Elsevier Science B.V.出版[参考:42]

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