BASIC MODEL RELATIONS FOR TEMPERATURE DEPENDENCIES OF FUNDAMENTAL ENERGY GAPS IN SEMICONDUCTORS

摘要

Novel analytical models describing the temperature dependencies of fundamental energy gaps in semiconductors are shown to be consistent with basic equations due to the electron-phonon interaction mechanism. The principal deficiencies of three-parameter models and the inevitability of using more elaborate four-parameter representations are illustrated by alternative fittings of high-precision E(g)(T)-data given for GaAs by Grilli et al. Peculiarities of parameter constellations revealed by measured E(g)(T)-dependencies in wide-gap, versus medium-gap materials are briefly discussed. [References: 30]