Hole energy levels in p-type delta-doped Si quantum wells: Influence of the spilt-off band

摘要

Electronic structure calculations in p-type B delta-doped Si quantum wells are carried out self-consistently and within the Thomas-Fermi approximation. The calculations assume a three independent (hh + Ih + so) hole band model. The numerically calculated spectra are compared between themselves and with experimental results, making emphasis on the effects of the inclusion of the so hole band. The use of a three-independent band model is presented for the first time in a Thomas-Fermi approximation. Despite of the simplicity of this theory, comparison of the obtained results with self-consistent theoretical calculations gives goad agreements. [References: 7]