Threshold currents under pressure in InGaAsSb/AlGaAsSb laser diodes

摘要

Threshold currents in quantum well InGaAsSb lasers grown on GaSb substrates have been measured in the temperature range from 170 up to 320 K at pressures up to 20 kbar. These measurements were aiming at the identification of major recombination channels in these devices: Auger recombination involving spin-orbit split-off band and leakage of electrons to p-claddings. The emission lines shifted with pressure 12 meV per kbar. Our results indicated that the expected resonance of Auger recombination for E-g = Delta does not occur in the studied pressure/temperature range.