Investigation of Magnetoresistance in Crystalline Semiconductors in the Metal-Insulator Transition Region under Hydrostatic Compression

摘要

The behavior of the transverse magnetoresistance in a crystalline semiconductor in the region of transition from non-activated conductivity to variable range hopping (VRH) conductivity with irreversible change of the localization radius has been studied. The heavily doped, compensated, quasi-gapless semiconductor p-CdSnAs_2 was selected as a model. The interest was extracted from the experimental data on the temperature dependence of the transverse magnetoresistance in the 2 to 77.6 K range, for fields up to 15 kOe and pressures up to 1.5 GPa.