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Effects of boron-nitrogen pair on the electronic properties of zigzag graphene nanoribbon

机译:硼氮对Z字形石墨烯纳米带电子性能的影响

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摘要

The geometry structures and electronic properties of zigzag graphene nanoribbons (ZGNRs) with boron-nitrogen (B-N) pair edge-doping are investigated by performing first-principles calculations based on density functional theory. The calculated results show that the B-N pair substitutional doping at the edge changes the conducting characteristic of ZGNR to a half-metallic one with increasing concentration of boron (nitrogen) dopants, which may be attributed to the changes of the ionic potential difference between boron and nitrogen atoms located at the edge of the ZGNRs. It is found that the concentration of dopants at the edge regulate the electronic properties of ZGNRs. It is predicted that the theoretical results may be valuable in the design of GNR-based spintronics devices.
机译:通过基于密度泛函理论的第一性原理计算,研究了硼氮(B-N)对掺杂的之字形石墨烯纳米带(ZGNRs)的几何结构和电子性能。计算结果表明,随着硼(氮)掺杂剂浓度的增加,边缘的BN对取代掺杂将ZGNR的导电特性改变为半金属态,这可能归因于硼与氮之间离子电势差的变化。位于ZGNR边缘的氮原子。发现边缘处的掺杂剂浓度调节ZGNR的电子性质。据预测,理论结果在基于GNR的自旋电子器件的设计中可能有价值。

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