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Effect of SOCl_2 doping on electronic properties of single-walled carbon nanotube thin film transistors

机译:SOCl_2掺杂对单壁碳纳米管薄膜晶体管电子性能的影响

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We report on SOCl_2 doping of separated single-walled carbon nanotubes (SWCNTs) having different properties (metallic, semiconducting, and mixed). SWCNTs were doped by dropping SOCl_2 on a percolated network which was prepared on a Si substrate and the doping effect was evaluated by measuring electrical characteristics. Pristine semiconducting SWCNTs showed p-type transfer characteristics. After SOCl_2 doping, the conductivity of semiconducting SWCNTs increased about two times and the on/off ratio decreased by a factor of 3. Mixed pristine samples showed slight p-type characteristics and turned to metallic characteristics after doping. The network of metallic SWCNTs did not show any significant change of conductivity before and after doping.
机译:我们报告了具有不同特性(金属,半导体和混合)的分离的单壁碳纳米管(SWCNT)的SOCl_2掺杂。通过将SOCl_2滴加到在硅衬底上制备的渗透网络上来掺杂SWCNT,并通过测量电特性来评估掺杂效果。原始的半导体SWCNT显示出p型转移特性。掺杂SOCl_2后,半导体SWCNT的电导率增加了约两倍,通/断比降低了3倍。掺杂的原始样品显示出轻微的p型特性,并在掺杂后变成了金属特性。金属SWCNT的网络在掺杂之前和之后均未显示出电导率的任何显着变化。

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