Self heating effects of high power SOI vertical DMOS transistor with lateral drain contacts

摘要

Self heating effects in silicon-on-insulator (SOI) high power Vertical Diffused MOS (VDMOS) transistors have been investigated by electro-thermal simulations. Unlike other conventional VDMOS devices, here we work on a modified VDMOS transistor with drain contacts at the surface. In this work we study two different aspects of this transistor namely: (1) Effect of self heating on the device performance and (2) effect of the elevated temperature on the device characteristics. Our simulation results indicate that the temperature distribution is concentrated at the drift region under the gate area and spreads down toward the drain area. The self heating effect gives a notable effect on our newly proposed VDMOS in the on-state (when Vg > Vt), and the breakdown point decreases. As we increase the ambient temperature the breakdown point decreases further. [References: 10]