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Effect of simultaneous helium implantation on the microstructure evolution of Inconel X-750 superalloy during dual-beam irradiation

机译:同时注入氦气对双光束辐照过程中Inconel X-750高温合金显微组织演变的影响

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This study focuses on investigation into the effect of helium implantation on microstructure evolution in Inconel X-750 superalloy during dual-beam (Ni+/He+) irradiation. The 1MeV Ni+ ions with the damage rate of 10(-3) dpa/s as well as 15keV He+ ions using rate of 200 appm/dpa were simultaneously employed to irradiate specimens at 400 degrees C to different doses. Microstructure characterization has been conducted using high-resolution analytical transmission electron microscopy (TEM). The TEM results show that simultaneous helium injection has significant influence on irradiation-induced microstructural changes. The disordering of (Ni-3(Al, Ti)) precipitates shows noticeable delay in dose level compared to mono heavy ion irradiation, which is attributed to the effect of helium on promoting the dynamic reordering process. In contrast to previous studies on single-beam ion irradiation, in which no cavities were reported even at high doses, very small (2-5nm) cavities were detected after irradiation to 5 dpa, which proved that helium plays crucial role in cavity formation. TEM characterization also indicates that the helium implantation affects the development of dislocation loops during irradiation. Large 1/3 < 111 > Frank loops in the size of 10-20nm developed during irradiation at 400 degrees C, whereas similar big loops detected at higher irradiation temperature (500 degrees C) during sole ion irradiation. This implies that the effect of helium on trapping the vacancies can help to develop the interstitial Frank loops at lower irradiation temperatures.
机译:这项研究的重点是调查在双束(Ni + / He +)辐照期间,氦气注入对Inconel X-750高温合金微观组织演变的影响。同时使用损伤速率为10(-3)dpa / s的1MeV Ni +离子和使用200 appm / dpa的速率的15keV He +离子同时在400摄氏度下以不同剂量辐照样品。使用高分辨率分析透射电子显微镜(TEM)进行了微结构表征。 TEM结果表明,同时注入氦气对辐照引起的微观结构变化具有重大影响。与单重离子辐射相比,(Ni-3(Al,Ti))沉淀物的无序显示出剂量水平的明显延迟,这归因于氦气对促进动态重排过程的影响。与以前的单束离子辐照研究相反,在单束离子辐照研究中,即使在高剂量下也没有空洞的报道,而在辐照5 dpa后检测到非常小的(2-5nm)空洞,这证明氦在空洞形成中起关键作用。 TEM表征还表明,氦气注入会影响辐照过程中位错环的发展。在400摄氏度的辐照过程中会形成尺寸为10-20nm的大1/3 <111>弗兰克环,而在单一离子辐照下,在较高的辐照温度(500摄氏度)下会检测到类似的大环。这暗示着氦气对空位的俘获可以帮助在较低的辐射温度下发展间隙弗兰克环。

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