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Simultaneous Dual-Beam Implantation of Helium and Deuterium Ions in Tungsten Surfaces

机译:钨表面同时进行氦和氘离子双束注入

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摘要

One of the problems facing the fusion community is the particle fluxes that will impinge upon the plasma facing components (PFCs) such as the first wall and the divertor. Energetic helium (He) particles cause surface damage, microstructure development, and erosion. Tritium retention in the PFCs poses a safety hazard and must be limited. Tungsten is presently favored as the plasma-facing material for the divertor plates in the ITER reactor. While helium-only, deuterium-only (D, as a surrogate for tritium), and sequential helium-deuterium on tungsten implantation studies have been carried out over a broad range of energies and temperatures, simultaneous studies of He and D implantation are less common, particularly at energies over 1 keV.;A new dual ion beam experiment at the University of Wisconsin Inertial Electrostatic Confinement (UW-IEC) Laboratory has been designed and constructed to perform simultaneous dual-beam implantation studies: the Dual Advanced Ion Simultaneous Implantation Experiment (DAISIE). The work presented in this thesis focuses on helium and deuterium implantations in polycrystalline tungsten at energies of 30 keV, surface temperatures of 900 °C and 1100 °C, and incidence angles of 55° off normal. This experiment was based on electrostatic ion gun technology previously used to perform normal-incidence implantations by the UW-IEC laboratory. Single-beam, helium-only; dual-beam, helium-only; single-beam, deuterium-only; and simultaneous helium and deuterium implantations into tungsten were performed. Relative He and D implantation fluences of up to 6 x 1018 He cm--2 and 5.4 x 1019 D cm--2 were based on a 10% He-90% D fluence ratio.;Erosion yields were calculated from mass loss measurements, exceeding sputtering yield calculations by factors of 5 to 10 for He-only, D-only, and mixed He-D implantations. The surface morphologies induced by implantation were characterized using scanning electron microscopy, focused ion beam, and electron backscatter diffraction techniques to measure physical characteristics and trends with fluence and grain orientation. Surface morphologies created by He-only implantations were compared to previous implantation studies by the UW-IEC group at normal incidence, and similar morphologies and trends were identified. The orientation of the features was found to be highly dependent on the direction of the incident beam(s). Surface morphologies not previously identified by the UW-IEC group were created by D-only implantations at higher fluences, suggesting hydrogen embrittlement. Simultaneous implantation of He and D resulted in a superposition of the morphologies created by He-only and D-only implantation. Helium retention analysis was carried out using thermal desorption spectroscopy. The simultaneous implantation of He and D resulted in different trapping mechanisms for the implanted He compared to He-only implantation and an overall reduction in retained He in the samples. Another new experiment, the Ion Beam & Source Analyzer (IBSA) platform, was designed and constructed to perform experimental spatial and compositional analysis of the beams created by the ion guns for the first time since their development. Both the He and D beams were confirmed to have nearly-Gaussian profiles. The relative fractions of various D molecular ions created by the ion source were identified. Possible N and D2O impurities were identified within the He and D beams, respectively.
机译:聚变界面临的问题之一是粒子通量将撞击在面对等离子体的组件(PFC)(例如第一壁和分流器)上。高能氦(He)颗粒会导致表面损坏,微结构发展和腐蚀。 PFC中的retention保留会带来安全隐患,必须加以限制。目前,钨被优先用作ITER反应器中分流板的面向等离子体的材料。尽管在广泛的能量和温度范围内已进行了纯氦,纯氘(D,作为tri的替代物)和顺序氦-氘在钨注入中的研究,但同时进行He和D注入的研究却很少见。 ,特别是在能量超过1 keV时;威斯康星大学惯性静电禁闭(UW-IEC)实验室的新双离子束实验已设计并构建为可以进行同时的双电子束注入研究:双先进离子同时注入实验(DAISIE)。本文提出的工作重点是在30 keV的能量,900°C和1100°C的表面温度以及与法线成55°的入射角的情况下在多晶钨中注入氦和氘。该实验基于先前由UW-IEC实验室用于执行正常入射植入的静电离子枪技术。单束,仅氦气;双束,仅氦气;单束,仅氘;然后同时进行氦和氘向钨的注入。基于10%He-90%D能量密度比,高达6 x 1018 He cm--2和5.4 x 1019 D cm--2的相对He和D注入能量密度;侵蚀量是通过质量损失测量得出的,对于纯He,纯D和混合He-D注入,其溅射产率比溅射产量计算高5到10倍。使用扫描电子显微镜,聚焦离子束和电子背散射衍射技术对注入引起的表面形貌进行表征,以测量物理特征和通量和晶粒取向的趋势。将仅氦气植入产生的表面形态与UW-IEC组以前在正常入射情况下进行的植入研究进行了比较,发现了相似的形态和趋势。发现特征的方向高度依赖于入射光束的方向。 UW-IEC小组以前未发现的表面形态是通过仅D注入以较高的通量产生的,这表明氢脆。 He和D的同时植入导致仅He和D植入产生的形态重叠。使用热脱附光谱法进行氦气保留分析。与仅He注入相比,同时注入He和D导致注入的He的捕获机制不同,并且样品中保留的He总体减少。设计并构建了另一个新实验,即离子束和源分析仪(IBSA)平台,以对离子枪自开发以来首次产生的束进行实验空间和成分分析。 He和D光束都被确认具有近高斯分布。鉴定了由离子源产生的各种D分子离子的相对分数。分别在He和D光束中确定了可能的N和D2O杂质。

著录项

  • 作者

    Jasica, Matthew J.;

  • 作者单位

    The University of Wisconsin - Madison.;

  • 授予单位 The University of Wisconsin - Madison.;
  • 学科 Nuclear engineering.;Materials science.
  • 学位 Ph.D.
  • 年度 2018
  • 页码 301 p.
  • 总页数 301
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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