首页> 外文期刊>Philosophical magazine: structure and properties of condensed matter >Discrete dislocation simulation of nanoindentation: the influence of obstacles and a limited number of dislocation sources
【24h】

Discrete dislocation simulation of nanoindentation: the influence of obstacles and a limited number of dislocation sources

机译:纳米压痕的离散位错模拟:障碍物和有限数量的位错源的影响

获取原文
获取原文并翻译 | 示例
       

摘要

Nanoindentation is simulated on the computer by means of a 2D discrete dislocation model under the conditions of a constrained geometry. First, an indentation test near a grain boundary is investigated by the arrangement of only one boundary and second, an indentation test into the center of the surface of a small grain ( lamella) is mimicked by the arrangement of two boundaries. The effect of a limited number of dislocation sources is studied by the simulations of an indentation test in a plastically deformable film on an ideal elastic substrate and by such tests on an ideal elastic film on a plastically deformable substrate. The discrete nature of plasticity is shown to have a significant influence on the mechanical material behavior in all our investigations.
机译:通过二维离散位错模型在受限几何条件下在计算机上模拟纳米压痕。首先,仅通过一个边界的布置来研究晶粒边界附近的压痕测试,其次,通过两个边界的布置来模仿对小晶粒(薄片)表面中心的压痕测试。通过模拟在理想弹性基底上的可塑性变形膜上的压痕测试,以及通过在可塑性变形基底上的理想弹性膜上的此类测试,来模拟有限数量的位错源的影响。在我们所有的研究中,可塑性的离散性质都对机械材料的性能产生了重大影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号