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Full-scale atomistic simulations of dislocations in Ni crystal by embedded-atom method

机译:嵌入原子法对Ni晶体位错的全尺度原子模拟

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Full-scale atomistic simulations by the nudged elastic band method are performed to determine the energetics and core structures of dislocations in a Ni lattice using an embedded-atom method potential. We. find that for an edge dislocation, the potential yields very weak coupling between the partials which move almost individually. For a screw dislocation, the coupling between the partials is somewhat stronger and the partials move with some dependence. As expected, the results indicate that stacking fault energy has a controlling influence on the coupling behaviour of the partials. The effective Peierls energies and stresses are 1.30 x 10(-6) eV/angstrom and 2.79 x 10(-6) m for the edge dislocation, and 1.62 x 10(-4) eV/angstrom and 2.02 x 10(-4) m for the screw dislocation.
机译:通过嵌入的原子方法电势,通过微动弹性带方法进行了全面的原子模拟,以确定Ni晶格中位错的能量和核心结构。我们。发现对于边缘错位,势能在几乎逐个移动的部分之间产生非常弱的耦合。对于螺钉脱位,部分之间的耦合会更牢固,并且部分会以某种依赖性移动。正如预期的那样,结果表明堆垛层错能量对零件的耦合行为具有控制作用。有效的Peierls能量和应力对于边缘位错分别为1.30 x 10(-6)eV /埃和2.79 x 10(-6)m,以及1.62 x 10(-4)eV /埃和2.02 x 10(-4)米为螺钉脱位。

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