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Atomistic simulations of dislocation-interface interactions in the Cu-Ni multilayer system

机译:CU-NI多层系统中位错界面相互作用的原子模拟

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Multilayered Cu-Ni has a peak yield strength four orders of magnitude higher than either Cu or Ni because the multitude of interfaces obstruct glissile dislocations. The barrier strengths of the interfaces may be traced to four mismatches across an interface: modulus, lattice parameter, chemical and slip geometry. This paper describes sample embedded atom method (EAM) simulations of dislocations crossing interfaces, designed to separate the effects of the four mismatches. The results confirm some classical calculations and emphasize the importance of three new effects (i) an interface-chemical effect in which dislocations are trapped by core spreading in the interface, (ii) a coherency-chemical effect caused by coherency strains changing effective stacking fault energies and (iii) a coherency-modulus effect in which coherency strains change elastic moduli (and hence the Koehler stress) significantly.
机译:多层Cu-Ni的峰值屈服强度高于Cu或Ni的四个数量级,因为众多界面阻碍了透明脱位。接口的屏障强度可以追踪到界面的四个不匹配:模量,晶格参数,化学和滑动几何形状。本文介绍了样品嵌入式原子方法(EAM)仿真交叉界面,旨在分离四个不匹配的效果。结果证实了一些经典计算,并强调了三种新效果的重要性(i)一种界面化学效果,其中界面被界面中的核心传播捕获,(ii)由相干菌株改变有效堆叠故障引起的一致化学效果能量和(iii)一种相干模量效应,其中一致性菌株显着变化弹性模量(并因此提高了Koehler应力)。

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