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Secondary-ion-mass spectrometry study on near-stoichiometric LiNbO3 strip waveguide fabricated by vapour transport equilibration and Ti co-diffusion

机译:蒸汽传输平衡和Ti共扩散制备的近化学计量LiNbO3带状波导的二次离子质谱研究

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Secondary-ion-mass spectrometry was applied to study Ti-concentration profiles in the depth direction and on the surface of near-stoichiometric (NS) Ti:LiNbO3 strip waveguides fabricated using vapour transport equilibration (VTE) and co-diffusion of Ti-metal strips. Results show that the profile of Ti concentration along the width direction on the waveguide surface can be well fitted by a sum of two error functions, while, in the depth direction, the Ti concentration follows either a complementary error function or a generalized Gaussian function. Surface Ti concentration, 1/e width and depth, mean diffusivities along the width and depth directions of the guide are, respectively, 1.04 x 10(21) cm(-3), 8.5 mu m, 6.3 mu m, 0.18 and 0.1 mu m(2)/h. Two-dimensional refractive index profile in the NS waveguides is indirectly constructed by assuming linearity between Ti-induced index change and Ti concentration. The surface refractive index increments at 1545 nm, Delta n(o) and Delta n(e), are evaluated to be 3.132 x 10(-3) and 1.186 x 10(-2), respectively. All of the above-mentioned diffusion and optical parameters are compared with the corresponding data of the common congruent Ti: LiNbO3 waveguide or NS waveguide fabricated starting from a NS substrate. The rationality of the assumed linear relationship between the index change and the Ti concentration is discussed. The results show that the assumed linearity remains controversial, and all expressions and data with regard to the refractive index are the approximate results and need to be verified by direct measurement on refractive index.
机译:二次离子质谱法用于研究深度方向上以及在采用化学气相沉积(VTE)和共扩散扩散的Ti-Me制成的近化学计量(NS)Ti:LiNbO3条形波导表面上的Ti浓度分布带子。结果表明,通过两个误差函数之和,可以很好地拟合波导表面上的Ti浓度分布,而在深度方向上,Ti浓度遵循互补误差函数或广义高斯函数。表面Ti浓度,1 / e宽度和深度,沿导板宽度和深度方向的平均扩散率分别为1.04 x 10(21)cm(-3),8.5μm,6.3μm,0.18和0.1μm m(2)/小时。通过假设Ti引起的折射率变化和Ti浓度之间呈线性关系,可以间接构造NS波导中的二维折射率分布。在1545 nm,Δn(o)和Δn(e)处的表面折射率增量分别被评估为3.132 x 10(-3)和1.186 x 10(-2)。将所有上述散射和光学参数与从NS基板开始制造的通用全同Ti:LiNbO3波导或NS波导的相应数据进行比较。讨论了折射率变化和Ti浓度之间的线性关系的合理性。结果表明,假定的线性仍然存在争议,所有关于折射率的表达式和数据均为近似结果,需要直接测量折射率进行验证。

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