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Generalizated effective-medium approximation for hopping transport in topologically disordered systems

机译:拓扑无序系统中跳跃传输的广义有效介质近似

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A generalized effective-medium approximation (EMA) for hopping transport in topologically disordered systems such as amorphous semiconductors or impurity bands of crystalline semiconductors is derived. In contrast with previous theories we are able to include the influence of closed loops in the path summation. These terms are responsible for the algebraic long-time tails of the velocity autocorrelation function which also show up as non-analytic terms in the low-frequency part of the ac conductivity. If the closed-loop contributions are neglected the two-site EMA of Gochanour et al. and Movaghar et al. is re-obtained. We have tested the results of the present theory against simulations for an r-hopping network. [References: 21]
机译:推导了一种在拓扑无序系统(如非晶半导体或晶体半导体的杂质带)中跳跃传输的通用有效介质近似(EMA)。与先前的理论相比,我们能够在路径求和中包括闭环的影响。这些项负责速度自相关函数的代数长时间尾部,这些尾部在交流电导率的低频部分也显示为非解析项。如果忽略了闭环贡献,那么Gochanour等人的两点EMA。和Movaghar等。重新获得。我们已经针对r跳跃网络的仿真测试了本理论的结果。 [参考:21]

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