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Steady-state crack growth along a grain boundary in interconnects with a high electric field intensity

机译:高电场强度的互连中沿晶界的稳态裂纹扩展

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A pre-existing microcrack is considered to grow in a steady state along a grain boundary of an interconnect line under the action of an applied electric field. Consistent with electromigration, the mechanism of crack growth is assumed via diffusive transport of atoms from both crack surfaces to the grain boundary. A set of second order nonlinear ordinary differential equations for the crack shape is derived from physical principles and solved numerically using the fourth-order Runge-Kutta method, coupled with a two-point shooting method. The results showed that the steady-state crack velocity V is proportional to the applied field E-0 with an exponent of 1.5, that is V = AE(0)(1.5), in agreement with the previous analysis. However, the proportionality constant A is enhanced owing to electric field concentration at the crack tip. [References: 20]
机译:预先存在的微裂纹被认为在外加电场的作用下沿着互连线的晶界以稳态生长。与电迁移一致,通过原子从两个裂纹表面到晶界的扩散传输来假定裂纹扩展的机理。从物理原理导出了一组用于裂纹形状的二阶非线性常微分方程,并使用四阶Runge-Kutta方法结合两点射击方法对其进行了数值求解。结果表明,稳态裂纹速度V与外加电场E-0成比例,指数为1.5,即V = AE(0)(1.5),与先前的分析一致。但是,由于裂纹尖端处的电场集中,比例常数A增加。 [参考:20]

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