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The properties of amorphous carbon nitride thin films synthesized by pulsed laser deposition with various preparation conditions

机译:各种制备条件下脉冲激光沉积合成非晶碳氮化物薄膜的性能

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Surface morphology, deposition rate, bonding composition, structural, optical and electrical properties of XeCl excimer pulsed laser deposited amorphous carbon nitride (a-CNx) films using camphoric carbon (C10H16O) target in 0.8 Torr nitrogen (N) gas ambient as a function of laser fluences (LF) (from 2.8 to 5.2 J/cm(2)) with fixed target-to-substrate distances (TSD) at 45 mm. and substrate temperatures (ST) at 20 degrees C; TSD (from 25 to 45 mm) with fixed LF at 3.4 J/cm(2) and ST at 20 degrees C; and ST (from 20 to 500 degrees C) with fixed LF at 3.4 J/cm(2) and TSD at 45 mm are reported. At fixed TSD and ST, the surface roughness, particle density, deposition rate and N content increase, whereas the particle size decreases with higher LF. When the LF and ST are fixed, decreasing TSD results in an increase in the irregular small particle size, particle density, surface roughness, deposition rate, N content. On the other hand, when the LF and TSD are fixed, the surface roughness, particle density and particle size increase, whereas the deposition rate decreases with higher ST. The N content increases with ST up to 400 degrees C and decreases thereafter. We found that the amorphous structure of a-CNx films and the ratio of sp(2) trihedral component to sp(3) tetrahedral component are strongly dependent on the LF, TSD and ST. The a-CNx films with high N content have relatively high electrical resistivity.
机译:XeCl受激准分子脉冲激光沉积的非晶碳氮化物(a-CNx)膜的表面形态,沉积速率,键合组成,结构,光学和电学性质是在0.8托氮气(N)气体环境下使用樟脑碳(C10H16O)靶作为功能的激光通量(LF)(从2.8到5.2 J / cm(2)),目标到基板的距离(TSD)固定为45 mm。基板温度(ST)为20摄氏度; TSD(25至45 mm),固定LF为3.4 J / cm(2),ST为20摄氏度;和ST(从20到500摄氏度),固定LF为3.4 J / cm(2),TSD为45 mm。在固定的TSD和ST下,表面粗糙度,颗粒密度,沉积速率和N含量增加,而LF越高,颗粒尺寸越小。当LF和ST固定时,降低的TSD会导致不规则的小粒径,颗粒密度,表面粗糙度,沉积速率和N含量增加。另一方面,当LF和TSD固定时,表面粗糙度,颗粒密度和颗粒尺寸增加,而沉积速率随着ST的增加而降低。 N含量随ST升高至400摄氏度而增加,此后降低。我们发现a-CNx膜的非晶结构和sp(2)三面体组分与sp(3)四面体组分的比例强烈依赖于LF,TSD和ST。具有高N含量的a-CNx膜具有相对高的电阻率。

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