CHARACTERIZATION OF CuO THIN FILMS DEPOSITION ON POROUS SILICON BY SPRAY PYROLYSIS

摘要

CuO thin films on porous silicon (PSi) substrates were prepared via spray pyrolysis method. The structural, optical and electrical properties of the films and the heterojunctions were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and UV-Vis spectrophotometer. XRD results show that the film is polycrystalline and have a monoclinic crystal structure. Optical measurement indicates that the films had a low transmittance at the visible range and an optical bandgap of 2.2 eV. High rectification was achieved with a maximum photoresponsivity of about 0.59 A/W at 400 nm, so that the CuO/PSi heterojunction may act as a good candidate for the fabrication of an efficient photodiode.