Study of trapping rate and defect density in AlSi11.35Mg0.23 by Positron Annihilation Technique

摘要

The measurements of Positron Annihilation Lifetime Technique (PALT) have been performed on AlSi11.35Mg0.23 Alloys. It has been shown that positrons can become trapped at imperfect locations in solids and their mean lifetime can be influenced by changes in the concentration of such defects. No change has been observed in the mean lifetime values at the saturation of defect concentration. The trapping rates of positrons can be determined for thickness reduction up to 11% for dislocation. The concentration of defect (rho') range varies from 8.65 x 10(15) to 2.35 x 10(18) cm(-3) up to the maximum value of strain (epsilon) 0.23.