A schematic model of intersubband electron-electron interactions within a heavily doped AlxGa1? x As(Si)/GaAs heterojunction

摘要

In this work, the results of studying the electron-electron relaxation processes in a highly degenerate 2D-electron system with a fine structure of energy spectrum and spatial distribution of electron density are reported. The relations for the intra-and intersubband electron-electron interaction times are found and the matrix elements of a total screening potential and a dielectric function are determined in the approximation far from the long-wave limit for a heavily doped heterojunction, where two subbands of dimensional quantization are filled. It is shown that oscillations of the temperature and concentration dependences of the electron-electron interaction time are due to excitation of plasma oscillations of the 2D-electron system components.