Energy-band diagrams and capacity-voltage characteristicsof Cd_xHg_(1-x)Te-based variband structures calculated with taking intoaccount dependence of electron affinity on a composition

摘要

The purpose of this scientific work is the research of energy-band diagrams and capacity-voltage characteristics of Cd_xHg_(1-x)Te-based variband heteroepitaxial structures with taking into account the dependence of electron affinity on the composition. Numerical simulations of energy-band diagrams and capacity-voltage characteristics for metal-insulator-semiconductor structures based on CdxHgl–xTe-variable composition layers are carried out in this work. Energy diagrams are calculated with taking into account the dependence of electron affinity on the composition x of Cd_xHg(1-x)Te. This dependence was obtained in terms of dependence of the local electroneutrality level on the composition for Cd_xHg_(1-x)Te.