320x256 HgCdTe IR FPA with a built-in shortwave cut-off filter

摘要

A photovoltaic detector design based on the graded band gap HgCdTe MBE structure with high conductivity layer (HCL) at interface, which provides photodiodes series resistance and a shortwave cut-off filter is developed. The optimal HCL parame-ters giving high quantum efficiency and minimal noise equivalent temperature difference were determined by calculations and experimentally confirmed. The hybrid 320 x256 IR FPA operating in 8-12 pm spectral range was fabricated. The threshold power responsivity and minimal noise equivalent temperature difference values at wavelength maximum were 1.02 x 10 W/cm~2, 4.1 x10~8 V/W and 27 mK, respectively.