Different cap-barrier design for MOCVD grown HOT HgCdTe barrier detectors

摘要

The performance of HgCdTe barrier detectors with cut-off wavelengths up to 3.6 mu m fabricated using metaloorganic chemical vapour deposition operated at high temperatures is presented. The detectors' architecture consists of four layers: cap contact, wide bandgap barrier, absorber and bottom contact layer. The structures were fabricated both with n- and p-type absorbing layers. In the paper, different design of cap-barrier structural unit (n-B-p, n(+)-B-p, p(+)-B-p) were analysed in terms of various electrical and optical properties of the detectors, such as dark current, current responsivity time constant and detectivity.