Integrated, high-mobility polymer field-effect transistors driving polymer light-emitting diodes

摘要

An improved poly-hexyithiophene (P3HT) polymerfield-effect transistor with field-effect mobility of 0.05-0.1cm2/Vs and ON-OFF current ratio of 1 06~i 08 is demonstrated.The high ON-OFF ratio is obtained by careful device processing inN2 atmosphere and use of a reducing surface capping layer. Thedevice has sufficient post-processing robustness that it can beintegrated without degradation into a simple multilayeroptoelectronic device in which the FET supplies the current to apolymer LED. For comparable size of FET and LED the FETsupplies a current density of 10 InA/cm2 to the LED resulting in abrightness in excess of 100 Cd/m2. The FET-LED device is a steptowards optoelectronic integrated circuits such as all-polymeractive-matrix LED displays.