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Upper critical field, irreversibility field, and critical current density of powder-in-tube-processed MgB_2/Fe tapes

机译:管内粉末处理的MgB_2 / Fe带的上临界场,不可逆场和临界电流密度

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We fabricated pure and SiC-added MgB_2/Fe composite tapes using a MgH_2 starting powder and applying heat treatments at 600-900 deg C and systematically investigated their superconducting properties. For both the pure and SiC-added tapes, the critical temperature (T_c) increased with increasing heat-treatment temperature due to the improved crystallinity of MgB_2. The SiC addition decreased the T_c but increased the slope of the B2~f and B_(irr)-T curves, dSC2/dT and d B_(irr)/dT, for all heat-treatment temperatures. The d B_(irr)/dT and d B_(irr)/dT of the pure tape decreased with increasing heat-treatment temperature from 600 to 700 deg C because of the longer coherence length associated with the improved crystallinity. However, the SiC addition significantly decreased the heat-treatment temperature dependences of dS2/dr and d B_(irr)/dT. At a temperature of ~20 K, which is easily obtained using a cryocooler, the B_(irr) is governed by both the T_c and d B_(irr)/d T. The B_(irr) of a pure tape at 20 K decreased with increasing heat-treatment temperature from 600 to 700 deg C, but the B_(irr) of the 10 mol percent SiC-added tape increased with the temperature. These behaviours can be explained by the heat-treatment temperature dependence of the T_c and d B_(irr)/dT. At 20 K the highest B_(irr) of 10 T was obtained under the conditions of a 10 mol percent SiC addition and heat-treatment temperature of 900 deg C. This B_(irr) at 20 K is comparable to that of commercial Nb-Ti at 4.2 K. The 10 mol percent SiC-added tape heat treated at 900 deg C and the 5 at: percent SiC-added tape heat treated at 800 deg C showed J_c (MgB_2 core) values higher than 10~4 A cm~(-2) at 20 K in 5 T.
机译:我们使用MgH_2起始粉末并在600-900摄氏度下进行热处理,制造了纯的且添加SiC的MgB_2 / Fe复合带,并系统地研究了它们的超导性能。对于纯带和添加SiC的带材,由于MgB_2结晶度的提高,临界温度(T_c)随着热处理温度的升高而增加。在所有热处理温度下,SiC的添加均降低了T_c,但增加了B2〜f和B_(irr)-T曲线的斜率,dSC2 / dT和d B_(irr)/ dT。纯带的d B_(irr)/ dT和d B_(irr)/ dT随着热处理温度从600摄氏度增加到700摄氏度而降低,这是因为与结晶性改善相关的更长的相干长度。但是,SiC的添加显着降低了dS2 / dr和d B_(irr)/ dT的热处理温度依赖性。在〜20 K的温度下(可以使用低温冷却器轻松获得),B_(irr)由T_c和d B_(irr)/ d T共同控制。纯胶带在20 K时的B_(irr)降低随着热处理温度从600摄氏度增加到700摄氏度,但是10摩尔%的SiC带的B_(irr)随温度增加。这些行为可以通过T_c和d B_(irr)/ dT的热处理温度依赖性来解释。在20 K下,在添加10 mol%SiC和900摄氏度的热处理温度的条件下,获得了10 T的最高B_(irr)。在20 K下,此B_(irr)与商用Nb- Ti在4.2 K时进行热处理。在900℃下热处理的10 mol%的SiC添加带和在800℃下进行热处理的5 mol%的SiC添加带显示的J_c(MgB_2芯)值高于10〜4 A cm〜。 (-2)在5 T中20K。

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